InGaAs Photodiodes

InGaAs photodiode is a high-performance optoelectronic device based on II-VI group compound semiconductor materials, renowned for its excellent infrared light detection capability. The core material InGaAs forms a semiconductor structure with a specific bandgap width through precise regulation of the ratio of Indium In and Ga, enabling efficient absorption of infrared light within the wavelength range of 800nm to 2600nm. When struck by photons, electrons in the InGaAs material gain energy and transition to the conduction band, forming photogenerated carriers, thus converting infrared light signals into electrical signals.

InGaAs photodiodes possess characteristics such as high responsivity, low dark current, and fast response speed, playing a key role in fields like optical communication, infrared imaging, and Light Detection and Ranging. For instance, in fiber-optic communication, they enable high-sensitivity reception of 1550nm wavelength optical signals, supporting long-distance and high-speed data transmission. In infrared thermal imaging cameras, they can capture weak thermal radiation signals to achieve clear night vision imaging. Additionally, benefiting from mature semiconductor processes, InGaAs photodiodes can be integrated into miniaturized and highly integrated optoelectronic systems, providing reliable photodetection solutions for aerospace, security monitoring, and other fields.