概述
The black silicon photodiode is a high‑performance optoelectronic device based on surface nanostructure modification, relying on the unique physical properties of black silicon to achieve photoelectric conversion. Its surface sharp‑cone nanostructures significantly reduce light reflection, while ultra‑doping processes with elements such as sulfur and nitrogen introduce impurity energy levels. As a result, the spectral response ranges from 200 nm to 1600 nm, with an external quantum efficiency (EQE) of up to 96% or higher. The device simultaneously offers high light absorption, low dark current, and broad‑spectrum response.
With its excellent light‑trapping capability and high photoelectric conversion efficiency, the device is widely used in various fields. In wearable health devices, its high sensitivity enables accurate detection of biological optical signals, supporting real‑time blood oxygen and heart rate monitoring in smart bands and watches. In high‑precision photometric and analytical instruments, its broad spectral response and low noise ensure the accuracy of light intensity and spectral measurements. In X‑ray imaging, its efficient photoelectric conversion improves image clarity. Additionally, it is suitable for industrial sensing and environmental monitoring applications, and is available in multiple package formats such as SMD and TO‑can to meet diverse integration requirements.