High Speed InGaAs Photodiodes

InGaAs photodiode is a high-performance optoelectronic device based on II-VI group compound semiconductor materials, renowned for its excellent infrared light detection capability. The core material InGaAs forms a semiconductor structure with a specific bandgap width through precise regulation of the ratio of Indium and Gallium, enabling efficient absorption of infrared light within the wavelength range of 800nm to 2600nm. When struck by photons, electrons in the InGaAs material gain energy and transition to the conduction band, forming photogenerated carriers, thus converting infrared light signals into electrical signals.

High-speed InGaAs photodiodes feature advantages of high sensitivity, fast response, high bandwidth, and low noise, making them applicable to various scenarios. For example, in long-distance fiber optic networks, even when optical signals weaken after traveling far, they can accurately "capture" and convert the signals to ensure stable network signal transmission without interruption. In high-speed data transmission with rates above 2.5 Gbps, they can quickly complete the conversion between optical and electrical signals, enabling data to "travel" fast and stably. In the field of autonomous driving, LiDAR uses them to receive reflected laser signals, thereby accurately determining the distance and position of surrounding obstacles. In infrared surveillance cameras, they can convert thermal radiation emitted by objects into image signals to achieve night vision functions. Researchers use them to detect light of specific wavelengths for material composition analysis. In quantum communication, they can detect single-photon signals to ensure the security of information transmission.